2
RF Device Data
Freescale Semiconductor
MRF19090SR3
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS
= 0 Vdc, I
D
= 100
μA)
V(BR)DSS
65
?
?
Vdc
Zero Gate Voltage Drain Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Forward Transconductance
(VDS
= 10 Vdc, I
D
= 3 Adc)
gfs
?
7.2
?
S
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 300
μAdc)
VGS(th)
2.0
?
4.0
Vdc
Gate Quiescent Voltage
(VDS
= 26 Vdc, I
D
= 750 mAdc)
VGS(Q)
2.5
3.8
4.5
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 1 Adc)
VDS(on)
?
0.10
?
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(VDS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Crss
?
4.2
?
pF
Functional Tests
(In Freescale Test Fixture)
Two-Tone Common-Source Amplifier Power Gain
(VDD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA,
f = 1930 MHz, Tone Spacing = 100 kHz)
Gps
10
11.5
?
dB
Two-Tone Drain Efficiency
(VDD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA,
f = 1930 MHz, Tone Spacing = 100 kHz)
η
33
35
?
%
3rd Order Intermodulation Distortion
(VDD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA,
f = 1930 MHz, Tone Spacing = 100 kHz)
IMD
?
-30
-28
dBc
Input Return Loss
(VDD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA,
f = 1930 MHz, Tone Spacing = 100 kHz)
IRL
?
-12
?
dB
Pout, 1 dB Compression Point
(VDD
= 26 Vdc, P
out
= 90 W CW, f = 1930 MHz)
P1dB
?
90
?
W
1. Part is internally matched both on input and output.
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